isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Vol...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 70V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in medium power liner amplifier and
switching service in consumer ,automotive and industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
75
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W
2N6101
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 5A ; VCE= 4V
VCE= 75V; VBE= -1.5V VCE= 75V; VBE= -1.5V;TC=150℃
VCE= 60V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE-1
DC Current Gain
...
