2N6212

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6212 DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous -350 -300 -6 -2 ICM Collector Current-Peak -5 IB Collector Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 35 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6212 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -0.5mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -125mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -125mA ICEV Collector Cutoff Current VCE= -315V; VBE(off)= -1.5V ICEO Collector Cutoff Current VCE= -150V; IB= 0 IEBO Emitter Cutof...