isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VC...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-3
A
PC
Collector Power Dissipation@TC=25℃
75
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.67 ℃/W
2N3171H
ISC Website:www.iscsemi.cn
isc Silicon
PNP Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.14A
ICEO
Collector Cutoff Current
VCE= -40V; IB=0
IEBO
Emitter Cutoff Current
VEB= -10V; IC=0
hFE
DC Current Gain
IC= -1A ; VCE= -3V
2N3171H
MIN MAX UNIT
-0.75 V
-1.8
V
-0.1 mA
-0.1 mA
12
36
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the appli...