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2N3906 Dataheets PDF



Part Number 2N3906
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2N3906 Datasheet2N3906 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA ) ·NPN complement to Type 2N3904. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching ·Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IBM .

  2N3906   2N3906


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isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA ) ·NPN complement to Type 2N3904. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching ·Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IBM Peak base current Ptot Total Power Dissipation TJ Junction Temperature Tstg Storage Temperature VALUE UNIT -40 V -40 V -5 V -200 mA -300 mA -100 mA -500 mW -65~150 ℃ -65~150 ℃ 2N3906 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient MAX 250 UNIT K/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N3906 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-base breakdown voltage IC=-10mA, IE=0 V(BR)CEO Collector-emitter breakdown voltage IC= -1mA , IB=0 V(BR)EBO Emitter-base breakdown voltage IE= -10mA, IC=0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= -10mA; IB= -1mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA VBE(sat)1 base-emitter saturation voltage IC= -10mA; IB=-1mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA ICBO collector cut-off current VCB =-30 V,IE = 0 IEBO Emitter Cutoff Current VEB=-6V; IC=0 hFE-1 DC Current Gain IC= -0.1 mA ; VCE= -1V hFE-2 DC Current Gain IC=- 1 mA ; VCE=-1V hFE-3 DC Current Gain IC= -10 mA ; VCE=-1V hFE-4 DC Current Gain IC= -50 mA ; VCE=-1V hFE-5 DC Current Gain IC=-100 mA ; VCE=-1V MIN MAX UNIT -40 V -40 V -5 V -0.2 V -0.2 V -0.85 V -0.95 V -0.05 μA -0.05 μA 60 80 100 300 60 30 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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