isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6110
DESCRIPTION ·DC Current Gain-
: hFE = 30-150@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -30V(Min) ··Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier and switching circuits applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Vo.