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2N6110 Dataheets PDF



Part Number 2N6110
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2N6110 Datasheet2N6110 Datasheet (PDF)

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6110 DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -30V(Min) ··Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Vo.

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