isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6125
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VC...
isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2N6125
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCE(sat) = -0.6V(Max.)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min) ·Complement to Type 2N6122 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power amplifier and switching circuits
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-8
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 3.125 ℃/W
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isc Silicon
PNP Power
Transistor
2N6125
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -1.0A
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= -1.5A; VCE= -2V
VCE= -60V; VBE(off)= -1.5V VCE= -60V; VBE...