2N6132

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N6132 DESCRIPTION ·DC Current Gain- : hFE = 20-100@ IC= -2.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·Complement to Type 2N6129 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -1.4A VBE(on) Base-Emitter On Voltage IC= -7A; VCE= -4V ICBO Collector Cutoff Current VCB= -40V; IE= 0 ICEO Collector Cutoff Current VCE= -40V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2.5A ; VCE= -4V hFE-2 DC Current Gain IC= -7A ; VCE= -4V fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -4V 2N6132 MIN MAX UNIT -40 V -1.4 V -3.0 V -0.1 mA -1.0 mA -1.0 mA...