isc Silicon NPN Darlingtion Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
h...
isc Silicon
NPN Darlingtion Power
Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 750 (Min) @ IC =10 Adc ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)=80V(Min) ·Complement to type 2N6286 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Intended for general purpose amplifier and low frequency
switching applications, such as linear and switching industrial equipment.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current -Continuous
20
A
ICP
Collector Current-Peak
40
A
IB
Base Current
0.5
A
PC
Collector Power Dissipation@TC=25℃ 160
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX 1.09
UNIT ℃/W
2N6283
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isc Silicon
NPN Darlingtion Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 200mA
VBE(sat) Base-Emitter Saturation voltage
IC= 20A; IB= 200mA
VBE(on) Base-Emitter On voltage
IC= 10A ; VCE=...
