2N6292

isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Complement to Type 2N6107 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W 2N6292 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 3A VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current ICEO Collector Cutoff Current IC= 7A ; VCE= 4V VCE= 80V; VBE(off)= 1.5V VCE= 70V; VBE(off)= 1.5V; TC= 150℃ VCE= 60V;IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2A ; VCE= 4V hFE-2 DC Current Gain IC= 7A ; VCE= 4V COB Output Capacitance IE= 0 ; VCB= 10V; f...