2SA496

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -30V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous 1 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA496 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA496 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -30 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -2V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -0.8 V -1.3 V -1.0 μA IEBO Emitter Cutoff Current VEB= -5; IC= 0 -1.0 μA hFE-1 DC Current Gain IC= -50mA; VCE= -2V 40 240 hFE-2 DC Current Gain IC= -800mA; VCE= -2V 13 fT Current-Gain—Bandwidth Product IC= -10mA; VCE= -10V 100 MHz ...