2SA1006B

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -250Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Total Power Dissipation@ TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1006B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V ICBO Collector Cutoff Current VCB= -150V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -3.0V; IC=0 -1.0 μA hFE-1 DC Current Gain IC= -5mA ; VCE= -5V 30 hFE-2 DC Current Gain IC= -150mA ; VCE= -5V 60 320 fT Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V ...