2SA1012-D

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012-D DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·“-D”= TO-252 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A MIN TYP. MAX UNIT -50 V -0.4 V isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012-D VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain—Bandwidth Product COB Output Capacitance Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= -3A; IB= -0.15A VCB= -50V ; IE= 0 VEB= -5V; IC= 0 IC= -1A ; VCE= -1V IC= -3A ; VCE= -1V IC= -1A ; VCE= -4V IE= 0; VCB= -10V; ftest=...