2SA1145

isc Silicon PNP Power Transistor DESCRIPTION ·Low collector output capacitance ·High frequency ·Complement to 2SC2705 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -50 mA 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1145 isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA; IB= -1mA VBE(on) Base-Emitter Voltage IC= -10mA;VCE= -5V ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -10mA; VCE= -5V fT Current-Gain—Bandwidth Product IC= -10mA; VCE= -10V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz  hFE Classifications O Y 80-160 120-240 2SA1145 MIN TYP. MAX UNIT -150 V -1 V -0.8 V -0.1 μA -0.1 μA 80 240 200 MHz 2.5 pF isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1145 NOTIC...