2SA1244

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1244 DESCRIPTION ·With TO-251(IPAK) packaging ·High speed switching time ·Low collector saturation voltage ·Complement to type 2SC3074 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature -60 V -50 V -5 V -5 A -1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1244 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE1 DC Current Gain IC= -1A; VCE= -1V hFE1 DC Current Gain IC= -3A; VCE= -1V MIN TYP. MAX UNIT -0.4 V -1.2 V -50 V -1.0 μA -1.0 μA 70 240 30  hFE1 Classifications O Y 70-140 120-240 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any tim...