2SA1413-Z

isc Silicon PNP Power Transistor DESCRIPTION ·With TO-252(DPAK) packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -600 V VCEO Collector-Emitter Voltage -600 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 2 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1413-Z isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -0.3A; IB= -0.06A VBE(sat) Base-Emitter Saturation Voltage IC= -0.3A; IB= -0.06A VCBO Collector-Base Breakdown Voltage IC= -0.1mA; IB= 0 VCEO Collector-Emitter Breakdown Voltage IC=-10mA;IE=0 VEBO Emitter-Base Breakdown Voltage IE=-0.1mA;IB= 0 ICBO Collector Cutoff Current VCB= -600V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -5V hFE-2 DC Current Gain IC= -0.5A; VCE= -5V 2SA1413-Z MIN TYP. MAX UNIT -1.0 V -1.2 V -600 -600 -7 -10 μA -10 μA 30 120...