2SA1648

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1648 DESCRIPTION ·Available for high-current control in small dimension ·Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A ·Fast switching speed ·High DC current gain and excellent linearity ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak NOTE1 Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature -10 A 18 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ NOTE1:PW≤10ms,Duty cycle ≤50% NOTE2:Printing boarding mounted isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1648 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= -3A; IB= -150mA VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= -4A; IB= -200mA VBE(sat)-1NOTE Base-Emitter Saturation Voltage IC= -3A...