2SA1931

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -3A ·High Switching Speed ·Complement to Type 2SC3299 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1931 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1931 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC Current Gain IC= -3A; VCE= -1V fT Current-Gain—Bandwidth Product IC= -1A; VCE= -4V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz Switching Times ton Turn-On Time tstg Storage Time tf Fall Time IB1= -...