2SB624

isc Silicon PNP Transistor INCHANGE Semiconductor 2SB624 DESCRIPTION ·SOT-23 plastic-encapsulate transistors ·High DC current gain:hFE=200(TYP) @VCE = -1V, IC = -100mA ·Complementary to 2SD596 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.7 A 0.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -100mA ; VCE= -1V hFE-2 DC Current Gain IC= -700mA ; VCE= -1V fT Current-Gain—Bandwidth Product IC= -10mA ; VCE=- 6V VCE(sat) Collector-Emitter Saturation Voltage IC= -700mA; IB= -70mA VBE(on) Base-Emitter On Voltage IC=-10mA; VCE= -6V  hFE-1 Classification Marking BV1 BV2 BV3 BV4 BV5 hFE 110-180 135-220 170-270 200-320 250-400 2SB624 MIN TYP. MAX UNIT -0.1 μA -0.1 μA 110 400 50 160 MHz -0.6 V -0.6 -0.7 V Notice： ISC reserves the rights to make chang...