2SB1077

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1077 DESCRIPTION ·Silicon NPN triple diffused ·Low Collector-Emitter Saturation Voltage ·Complement to Type 2SD1558 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -4 ICM Collector Current-Peak -8 Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ 40 2 Tj Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1077 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -25mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A ,IB= -4mA VCE(sat)-2 Collector-Emitter Saturation voltage IC= -4A ,IB= -40mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -2A ,IB= -4mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -4A ,IB= -40mA ICBO Collector Cuto...