2SB1186

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SD1763 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -1 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1 μ...