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2SB1253

PNP Transistor

Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1253 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD1893 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ...

INCHANGE

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