isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO=160V(Min) ·Good Linearity ...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO=160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA968 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications ·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
160
V
VCEO Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
IE
Emitter Current- Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1.5
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2238
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isc Silicon
NPN Power
Transistor
2SC2238
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC=0.5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V ; IE= 0
IEBO
Emitter Cutoff Current
VEB=5V; IC= 0
hFE
DC Current Gain
IC=0.1A ; VCE=5V
COB
Output Capacitance
IE= 0; VCB=10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC=0.1A;VCE=10V
hFE Classifications
O
Y
70-140 120-240
MIN TYP. MAX UNIT
160
V
5
V
1.5
V
1.0
V
1.0 μA
...
