2SC2238B

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO=200V ·Good Linearity of hFE ·Complement to Type 2SA968B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor 2SC2238B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2238B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC=0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 180V ; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE DC Current Gain IC=0.1A ; VCE=5V COB Output Capacitance IE= 0; VCB=10V; ftest= 1MHz fT Current-Gain—Bandwidth Product IC=0.1A;VCE=10V MIN TYP. MAX UNIT 200 V 5 V 1.5 V 1.0 V 1.0 μA 1.0 μA 70 240 25 pF 100 MHz  hFE Classifications O Y 70...