isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2461
DESCRIPTION ·With TO-3 Package ·Complementary to 2SA10...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC2461
DESCRIPTION ·With TO-3 Package ·Complementary to 2SA1051 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Recommended for 10W high-fidelity audio frequency amplifier
output stage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO IC PC TJ Tstg
Emitter-Base Voltage
Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
5
V
15
A
150
W
150
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.833 ℃/W
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB=150V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
2SC2461
MIN MAX UNIT
2.0
V
2.0
V
50
uA
10
uA
80
160
40
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicat...
