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NPN Transistor. 2SC3298A Datasheet

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NPN Transistor. 2SC3298A Datasheet






2SC3298A Transistor. Datasheet pdf. Equivalent




2SC3298A Transistor. Datasheet pdf. Equivalent





Part

2SC3298A

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors 2SC32 98/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298 B ·Complement to Type 2SA1306/A/B ·Mi nimum Lot-to-Lot variations for robust device performance and reliable operati on APPLICATIONS ·Power amplifier appl ications. ·Driver stage.
Manufacture

INCHANGE

Datasheet
Download 2SC3298A Datasheet


INCHANGE 2SC3298A

2SC3298A; amplifier applications. ABSOLUTE MAXIM UM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol tage 2SC3298 160 V 2SC3298A 180 2 SC3298B 200 2SC3298 160 VCEO Colle ctor-Emitter Voltage 2SC3298A 180 V 2SC3298B 200 VEBO Emitter-Base Volt age 5 V IC Collector Current-Contin uous 1.5 A IB Base Current-Continuo us PC Collector Po.


INCHANGE 2SC3298A

wer Dissipation @ TC=25℃ TJ Junction Temperature 0.15 A 20 W 150 ℃ Tstg Storage Temperature Range -55~1 50 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2S C3298/A/B ELECTRICAL CHARACTERISTICS T C=25℃ unless otherwise specified SYM BOL PARAMETER CONDITIONS MIN TYP. MA X UNIT 2SC3298 160 V(BR)C.


INCHANGE 2SC3298A

EO Collector-Emitter Breakdown Voltage 2SC3298A IC= 10mA; IB= 0 180 V 2SC3 298B 200 VCE(sat) Collector-Emitter S aturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 50 0mA; VCE= 5V ICBO Collector Cutoff Cu rrent VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 100mA ; VCE= 5V fT Current-Gain—Bandw.

Part

2SC3298A

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors 2SC32 98/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298 B ·Complement to Type 2SA1306/A/B ·Mi nimum Lot-to-Lot variations for robust device performance and reliable operati on APPLICATIONS ·Power amplifier appl ications. ·Driver stage.
Manufacture

INCHANGE

Datasheet
Download 2SC3298A Datasheet




 2SC3298A
isc Silicon NPN Power Transistors
2SC3298/A/B
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3298
= 180V(Min)-2SC3298A
= 200V(Min)-2SC3298B
·Complement to Type 2SA1306/A/B
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
2SC3298
160
V
2SC3298A
180
2SC3298B
200
2SC3298
160
VCEO
Collector-Emitter
Voltage
2SC3298A
180
V
2SC3298B
200
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
0.15
A
20
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3298A
isc Silicon NPN Power Transistors
2SC3298/A/B
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SC3298
160
V(BR)CEO
Collector-Emitter
Breakdown Voltage
2SC3298A IC= 10mA; IB= 0
180
V
2SC3298B
200
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 500mA; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 100mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 100mA ; VCE= 10V
1.5
V
1.0
V
1.0 μA
1.0 μA
70
240
100
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1.0MHz
25
pF
hFE Classifications
O
Y
70-140 120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark




 2SC3298A
isc Silicon NPN Power Transistors
2SC3298/A/B
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
3 isc & iscsemi is registered trademark



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