2SC3299

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3299 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 50V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1307 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3299 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A VB E(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.15A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 3A; VCE= 1V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IB1=...