2SC3420

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 5.0A ·DC Current Gain- : hFE= 70(Min)@IC= 4A ·Low Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobe flash applications. ·Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse 8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC3420 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 2V ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 2V hFE-2 DC Current Gain IC= 4A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 2V COB Output Capacitance IE= 0 ; VCB= 10V, ftest= 1MHz  hFE-1 ...