isc Silicon NPN Power Transistor
2SC3457
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min) ·Fast Switching S...
isc Silicon
NPN Power
Transistor
2SC3457
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
2SC3457
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
800
V
VCEO(SUS) Collector-Emitter Sustaining Voltage
IC= 1.5A; IB1= -IB2= 0.3A; L= 2mH; clamped
800
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
1100
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE=0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
10
μA
...