2SC3632

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Voltage ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1 A PC Collector Power Dissipation 2.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3632 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 400mA; IB= 80mA VBE(sat)NOTE Base-Emitter Saturation Voltage IC= 400mA; IB= 80mA ICBO Collector Cutoff Current VCB= 600V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1NOTE DC Current Gain IC= 100mA; VCE= 5V hFE-2NOTE DC Current Gain NOTE:Pulse test PW≤350us,duty cycle ≤2%  hFE-1 Classifications M L K 30-60 40-80 60-120 IC= 500mA; VCE= 2V 2SC3632 MIN TYP. MAX UNIT 1 V 1.2 V 10 μA 10 μA 30 120 5 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of...