2SC3858

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3858 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1494 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 17 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3858 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A ICBO Collector Cutoff Current VCB= 200V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 8A ; VCE= 4V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz fT Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 10A ,RL= 4Ω, IB1= -IB2= 1A,VCC= 40V  hFE Classifications Y P G 50-100 70-140 90-180 MIN TYP. MAX UNIT ...