2SC4883A

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4883A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SA1859A ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio output driver and TV velocity-modulation applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4883A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 70mA ICBO Collector Cutoff Current VCB= 180V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 0.7A; VCE= 10V fT Current-Gain—Bandwidth Product IE= -0.7A; VCE= 12V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 1A ;IB1= -IB2= -0.1A; RL= 20Ω; VCC= 20V MIN TYP. MAX UNIT 180 V 1.0 V 10 μA 10 μA 60 240 120 MHz 3...