isc Silicon NPN Power Transistor
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter B...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC5200H
isc website：www.iscsemi.com
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isc Silicon
NPN Power
Transistor
2SC5200H
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A
VBE(on)
Base-Emitter On Voltage
IC= 7A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 300V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 7A ; VCE= 5V
COB
Output Capacitance
IE=0 ; VCB= 10V;f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC=1A ; VCE= 5V
MIN TYP. MAX UNIT
300
V
0.4 3.0
V
1.0 1.5
V
5
μA
...
