isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD870
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD870
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 4A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
5
A
IE
Emitter Current- Continuous
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
5
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD870
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VEBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
5.0
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
3.0 5.0
V
1.5
V
10 μA
hFE
DC Current Gain
IC= 1A; VCE= 5V
8
12
VECF
C-E Diode Forward Voltage
IF= 5A
1.6 2.0
V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
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