isc Silicon NPN Power Transistor
DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage-
: V(BR)CEO...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= 120V(Min.) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal deflection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IC(surge) Collector Current-Surge
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
20
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1163
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 300V ; IE= 0
hFE
DC Current Gain
IC= 5A ; VCE= 5V
tf
Fall Time
ICP= 3.5A; IB1= 0.45A
2SD1163
MIN TYP. MAX UNIT
120
V
6
V
2.0
V
1.2
V
5
mA
25
0.5 μs
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