isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1286-Z
DESCRIPTION ·With TO-252(DPAK) packaging ...
isc Silicon
NPN Darlington Power
Transistor
INCHANGE Semiconductor
2SD1286-Z
DESCRIPTION ·With TO-252(DPAK) packaging ·Very high DC current gain ·Monolithic darlington
transistor with integrated
antiparallel collector-emitter diode ·Complement to type 2SB963-Z ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator
regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM PT Tj
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation Max.Junction Temperature
60
V
60
V
8
V
1
A
2
A
2.0
W
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
-55~150 ℃
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistor
INCHANGE Semiconductor
2SD1286-Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=0.5A ,IB= 50mA
VBE(sat)1 Base-Emitter Saturation Voltage
IC=0.5A ,IB= 50mA
ICBO
Collector Cutoff Current
VCB=60V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.2A ; VCE= 2V
hFE-2
DC Current Gain
IC= 0.5A ...
