INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1409A
DESCRIPTION ·Hig...
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
2SD1409A
DESCRIPTION ·High collector-emitter breakdown voltage-
: V(BR)CEO= 400V(Min) ·High DC current Gain
: hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Igniter applications ·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
2 W
25
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
2SD1409A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
VECF
C-E Diode Forward Voltage
IF= 4A
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE -1
DC Current Gain
IC= 2A ; VCE= 2V
hFE -2
DC Current Gain
IC= 4A ; VCE= 2V
MIN TYP. ...