2SD1804

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1804 DESCRIPTION ·Excellent linearity of hFE ·Low Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50 V ·Fast switching time ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1804 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=4A; IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC=0 hFE-1 DC Current Cain IC= 0.5A ; VCE= 2V hFE-2 DC Current Cain IC= 6A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V MIN TYP. MAX UNIT 200 400 mV 0.95 1.3 V 1.0 μA 1.0 μA 70 400 35 180 MHz  hFE-2 Classifications Q R S T 70-140 100-200 140-280 200-400 NOTICE...