isc Silicon NPN Darlington Power Transistor
2SD1825
DESCRIPTION ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 2V, IC=...
isc Silicon
NPN Darlington Power
Transistor
2SD1825
DESCRIPTION ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 2V, IC= 2A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SB1223 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in control of motor drivers, printer
hammer drivers, and constant-voltage
regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
6
A
2 W
20
150
℃
Tstg
Storage Temperature
-55~150
℃
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isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 4mA
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 2A; VCE= 5V
2SD1825
MIN TYP. MAX UNIT
60
V
70
V
1.5
V
2.0
V
...
