2SD2012

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 DESCRIPTION ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Max) ·High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 2.0 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 60V ; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V ; IC=0 0.1 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V 100 320 hFE-2 DC Current Gain IC= 2A ; VCE= 5V 20 fT Current-Gain—Bandwidth Produc...