2SD2014

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Complement to Type 2SB1257 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed of driver of solenoid, relay and motor, series regulator and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2014 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD2014 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 3A ; VCE= 2V 2000 fT Current-Gain—Bandwidth Product IE= ...