2SD2901

isc Silicon NPN Power Transistor 2SD2901 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 900V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 1600 V 900 V 5 V 8 A 30 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A ICBO Collector Cutoff Current VCB= 1600V;IE= 0 IEBO Emitter Cutoff Current VEB= 5.0V ; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V hFE-2 DC Current Gain IC= 1A ; VCE= 5V hFE-3 DC Current Gain IC= 4.5A ; VCE= 5V 2SD2901 MIN TYP. MAX UNIT 900 V 0.95 V 1.5 V 1.0 mA 10 mA 20 29.5 20 30 6...