3CD9F

isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -7.5A ·DC Current Gain- : hFE=15-120@IC= -7.5A,，VCE=-5V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A PC Collector Power Dissipation 150 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.66 ℃/W 3CD9F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 5mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= 0.75A VBE(sat) Base-Emitter Saturation Voltage IC= -7.5A; IB= 0.75A ICEO Collector Cutoff Current VCE=- 300V; IB= 0 ICBO Collector Cutoff Current VCB=- 300V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -7.5A; VCE= -5V 3CD9F MIN MAX UNIT -300 V -1.5 V -1.8 V -2.0 mA -1.0 mA -1.0 mA 15 120 NOTICE： ISC re...