3DD7D

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=75℃ TJ Junction Temperature 7.5 A 75 W 175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.33 ℃/W 3DD7D isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.75A; IB= 0.38A ICEO Collector Cutoff Current VCE= 30V; IB= 0 hFE DC Current Gain IC= 3.75A; VCE= 10V 3DD7D MIN TYP. MAX UNIT 200 V 5 V 250 V 1.2 V 1.0 mA 15 180 NOTICE： ISC reserves the rights to make changes of the conten...