3DD9D

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD9D DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A PD Total Power Dissipation@TC=75℃ 150 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.66 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD9D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 10mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 10mA; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A VBE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A ICEO Collector Cutoff Current VCE=100V; IE= 0 hFE DC Current Gain IC= 7.5A; VCE= 5V MIN MAX UNIT 200 V 200 V 5 V 1.5 V 1.8 V...