isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-66 packaging ·Large collector current ·Low collector saturation v...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter
·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
1.5
A
PD
Total Power Dissipation@TC=75℃
20
W
TJ
Max.Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 5.0
UNIT ℃/W
3DD100A
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0
BVCBO Collector-Base Sustaining Voltage
IC= 1mA; IE= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
ICEO
Collector Cutoff Current
VCE= 50V; IB= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
3DD100A
MIN MAX UNIT
100
V
150
V
4
V
1.5
V
0.2
mA
0.5
mA
40
NOTICE： ISC reserves the rights to make changes of the content herein the datashe...
