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3DD103E

NPN Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·DC Current Gain- : hFE= 10(Min.)@IC= 1.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier , DC-DC convert...

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