INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD104B
DESCRIPTION ·With TO-3 packa...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
3DD104B
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter
·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
3
A
PD
Total Power Dissipation@TC=75℃
50
W
TJ
Max.Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0
℃/W
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INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
3DD104B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0
BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
hFE
DC Current Gain
IC= 1.5A; VCE= 10V
MIN MAX UNIT
300
V
600
V
4
V
2
V
0.1
mA
10
NOTICE: ISC reserves the rights to make change...