3DD200D

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @TC=25℃ 200 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.14 ℃/W INCHANGE Semiconductor 3DD200D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD200D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCBO Collector- Base Sustaining Voltage IB=1mA ; IE=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 3.2A VBE(on) Base-Emitter On Voltag...