isc Silicon NPN Power Transistors
DESCRIPTION ·X: DC Current Gain -hFE = 55-75@ IC= 0.5A ·Collector-Emitter Breakdown V...
isc Silicon
NPN Power
Transistors
DESCRIPTION ·X: DC Current Gain -hFE = 55-75@ IC= 0.5A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
5
A
90
W
150
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.39 ℃/W
3DD880X
isc Website:www.iscsemi.com
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isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICES
Collector Cutoff Current
VCE= 100V; VEB= 0
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A ; VCE= 15V
3DD880X
MIN MAX UNIT
100
V
1.2
V
1.8
V
0.2
mA
0.1
mA
0.5
mA
55
75
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