3DD4244D

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Energy-saving light · Electronic ballasts · High frequency switching power supply · High frequency power transform · Commonly power amplifier circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICP IB IBM Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current Base Current-Peak 700 V 400 V 9 V 3.0 A 6.0 A 1 A 2 A PC Collector Power Dissipation TC=25℃ 30 W Ti Junction Temperature Tstg Storage Temperature Range 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 4.17 ℃/W isc Product Specification 3DD4244D isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD4244D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5 A ;IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 1.0 A ;IB= 0.25A ICBO Collector Cutoff Current ...